{"id":66963,"date":"2024-01-24T17:17:56","date_gmt":"2024-01-24T09:17:56","guid":{"rendered":"https:\/\/www.cnledw.com\/?p=66963"},"modified":"2024-01-24T17:17:56","modified_gmt":"2024-01-24T09:17:56","slug":"%e9%a6%96%e4%b8%aa1700v-gan-hemt%e5%99%a8%e4%bb%b6%e5%8f%91%e5%b8%83","status":"publish","type":"post","link":"https:\/\/www.cnledw.com\/power\/newsdetail-66963.html","title":{"rendered":"\u9996\u4e2a1700V GaN HEMT\u5668\u4ef6\u53d1\u5e03"},"content":{"rendered":"
\u8fd1\u65e5\uff0c\u5e7f\u4e1c\u81f4\u80fd\u79d1\u6280\u56e2\u961f\u4e0e\u897f\u5b89\u7535\u5b50\u79d1\u6280\u5927\u5b66\u5e7f\u5dde\u7814\u7a76\u9662\/\u5e7f\u5dde\u7b2c\u4e09\u4ee3\u534a\u5bfc\u4f53\u521b\u65b0\u4e2d\u5fc3\u90dd\u8dc3\u9662\u58eb\u3001\u5f20\u8fdb\u6210\u6559\u6388\u56e2\u961f\u7b49\u7b49\u5408\u4f5c\u653b\u5173\uff0c\u901a\u8fc7\u91c7\u7528\u5e7f\u4e1c\u81f4\u80fd\u79d1\u6280\u6709\u9650\u516c\u53f8\u7684\u8584\u7f13\u51b2\u5c42AlGaN \/ GaN\u5916\u5ef6\u7247\uff0c\u57fa\u4e8e\u5e7f\u5dde\u7b2c\u4e09\u4ee3\u534a\u5bfc\u4f53\u521b\u65b0\u4e2d\u5fc3\u4e2d\u8bd5\u5e73\u53f0\uff0c\u6210\u529f\u57286\u82f1\u5bf8\u84dd\u5b9d\u77f3\u886c\u5e95\u4e0a\u5b9e\u73b0\u4e861700V GaN HEMTs\u5668\u4ef6\u3002<\/p>\n
\u76f8\u5173\u7814\u7a76\u6210\u679c\u4e8e2024\u5e741\u6708\u53d1\u8868\u4e8eIEEE Electron Device Letters\u671f\u520a\u3002X. Li et al., \u201c1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1.5 \u03bcm Thin Buffer,\u201d IEEE Electron Device Lett., vol. 45, no. 1, pp. 84\u201387, Jan. 2024, doi: 10.1109\/LED.2023.3335393.<\/p>\n